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| NJG1102F1 LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1102F1 is a Low Noise Amplifier GaAs MMIC designed for 800MHz band cellular phone handsets. This amplifier provides low current consumption and low noise figure at low supply voltage of 2.5V, low noise of 1.5dB and low current consumption of 3mA at supply voltage of 2.7V. NJG1102F1 includes internal self-bias circuit and input DC blocking capacitor with small package of MTP6-1. nFEATURES lLow voltage operation lLow current consumption lHigh small signal gain lLow noise figure lHigh Input IP3 lHigh output IP3 lPackage nPIN CONFIGURATION nPACKAGE OUTLINE NJG1102F1 +2.7V typ. 3mA typ. 17dB typ. @f=820MHz 1.4dB typ. @f=820MHz -3dBm typ. @f=820.0+820.1MHz 14dBm typ. @f=820.0+820.1MHz MTP6-1 (Mount Size: 2.8 x 2.9 x 1.2mm) F1 TYPE (Top View) 1 6 Pin connection 2 5 1.LNAOUT 2.NC 3.GND 4.GND 5.GND 6.LNAIN 3 4 Note: is package orientation mark. -1- NJG1102F1 nABSOLUTE MAXIMUM RATINGS PARAMETER Drain Voltage Input Power Power Dissipation Operating Temperature Storage Temperature SYMBOL CONDITIONS VDD Pin VDD=2.7V PD Topr Tstg (Ta=25C, Zs=Zl=50) RATINGS UNITS 5.0 V +10 dBm 150 mW -40~+85 C -55~+125 C nELECTRICAL CHARACTERISTICS PARAMETER Operating Frequency Drain Voltage Operating Current Small Signal Gain Gain Flatness Noise Figure Pout at 1dB Gain Compression point Input 3rd Order Intercept Point RFIN Port VSWR RFOUT Port VSWR (VDD=2.7V,f=820MHz,Ta=+25C, Zs=Zl=50) SYMBOL CONDITIONS MIN TYP MAX UNITS freq 800 820 1000 MHz VDD 2.5 2.7 4.5 V IDD RF OFF 3.0 4.0 mA Gain 15.0 17.0 19.0 dB fRF=810~885MHz Gflat 0.5 1.0 dB NF 1.4 1.6 dB P-1dB IIP3 VSWRi VSWRo f=820.0~820.1MHz -3.0 -7.0 +1.0 -3.0 2.0 2.0 3.0 3.0 dBm dBm -2- NJG1102F1 nTYPICAL CHARACTERISTICS NF,Gain vs. frequency (V =2.7V,I =3mA) 3 2.8 2.6 2.4 DD DD S21,S11,S22,S12 vs. frequency 20 18 16 14 12 10 8 6 25 20 15 (VDD =2.7V,IDD =3mA) 50 40 30 Gain(dB) S21,S11,S22(dB) Gain 10 5 0 -5 -10 -15 -20 -25 0 0.2 0.4 0.6 0.8 1 1.2 S21 20 10 0 -10 NF(dB) 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.82 0.84 0.86 0.88 0.9 0.92 0.94 0.96 0.98 1 NF 4 2 0 S22 S12 S11 -20 -30 -40 -50 1.4 1.6 1.8 2 frequency(GHz) frequency(GHz) Pin vs. Pout (V =2.7V,I =3mA,f=820MHz) 10 5 0 -5 -10 -15 -20 -25 -30 -40 DD DD Pin vs. Pout,IM3 (V =2.7V,I =3mA,f=820+820.1MHz) 10 0 -10 DD DD Pout P-1dB=+0.8dBm Pout,IM3(dBm) Pout(dBm) -20 -30 -40 -50 -60 IM3 IIP3=-3.5dBm -35 -30 -25 -20 -15 -10 -5 0 Pin(dBm) -70 -40 -35 -30 -25 -20 -15 -10 -5 0 Pin(dBm) DD 1.7 Gain vs. V 17.5 NF,I DD vs. V DD 3 ( f=820MHz ) ( f=820MHz ) I 1.6 17 DD 2.9 Gain(dB) 16.5 NF(dB) 16 1.4 15.5 1.3 2.7 15 2.6 14.5 2.5 3 3.5 4 4.5 5 1.2 2.5 3 3.5 4 DD 2.5 4.5 5 VDD (V) V (V) -3- DD NF I (mA) 1.5 2.8 S12(dB) NJG1102F1 nTYPICAL CHARACTERISTICS -4- NJG1102F1 nTYPICAL CHARACTERISTICS S21 vs. frequency(~20GHz) (V =2.7V,I =3mA) 25 20 15 10 DD DD S12 vs. frequency(~20GHz) (V =2.7V,I =3mA) 50 40 30 20 DD DD S21(dB) 5 0 -5 -10 -15 -20 -25 0 2 4 6 8 10 12 14 16 18 20 S12(dB) 10 0 -10 -20 -30 -40 -50 0 2 4 6 8 10 12 14 16 18 20 frequency(GHz) frequency(GHz) S11 vs. frequency(~20GHz) 25 20 15 10 S22 vs. frequency(~20GHz) 25 20 15 10 (VDD =2.7V,IDD =3mA) (VDD =2.7V,IDD =3mA) S11(dB) 5 0 -5 -10 -15 -20 -25 0 2 4 6 8 10 12 14 16 18 20 S22(dB) 5 0 -5 -10 -15 -20 -25 0 2 4 6 8 10 12 14 16 18 20 frequency(GHz) frequency(GHz) -5- NJG1102F1 nTYPICAL CHARACTERISTICS Scattering Parameter Table VDD=2.7V, IDD=3mA, ZO=50 S11 S21 Freq mag ang mag ang (GHz) (units) (deg) (units) (deg) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 1.000 1.000 1.000 0.994 0.976 0.965 0.925 0.912 0.868 0.849 0.813 0.790 0.761 0.739 0.713 0.697 0.669 0.647 0.616 0.592 0.567 0.542 0.523 0.498 0.486 0.466 0.455 0.441 0.429 0.420 -4.866 -10.234 -14.972 -20.871 -24.915 -30.526 -35.290 -40.103 -45.428 -49.349 -54.587 -58.371 -63.046 -66.963 -71.006 -75.141 -78.451 -82.248 -84.912 -87.965 -90.200 -92.166 -93.962 -95.631 -96.784 -97.556 -97.902 -98.495 -98.609 -98.095 1.342 1.524 1.557 1.572 1.564 1.548 1.504 1.499 1.467 1.443 1.408 1.379 1.337 1.322 1.308 1.258 1.233 1.198 1.163 1.132 1.099 1.068 1.041 1.011 0.981 0.958 0.931 0.901 0.877 0.849 -159.147 -179.085 169.103 158.960 150.714 142.447 134.839 127.579 120.278 113.971 107.103 101.107 95.249 89.341 83.704 78.278 72.642 67.296 61.655 56.671 51.306 46.616 41.818 37.218 32.941 28.504 24.687 20.371 16.741 12.899 S12 mag ang (units) (deg) 0.006 0.006 0.006 0.007 0.007 0.007 0.007 0.008 0.008 0.008 0.009 0.009 0.010 0.011 0.013 0.015 0.017 0.019 0.022 0.024 0.027 0.030 0.033 0.036 0.040 0.043 0.046 0.050 0.053 0.057 14.420 22.117 29.722 31.125 35.066 41.693 44.722 48.888 53.252 58.494 65.663 71.121 79.229 84.816 90.070 93.627 96.762 98.510 99.423 99.437 99.393 98.567 97.417 96.016 94.289 92.819 90.816 89.017 86.927 84.724 S22 mag ang (units) (deg) 0.945 0.935 0.927 0.926 0.920 0.915 0.912 0.905 0.906 0.898 0.902 0.896 0.897 0.898 0.895 0.894 0.895 0.889 0.890 0.885 0.883 0.889 0.886 0.889 0.892 0.890 0.892 0.895 0.894 0.899 -3.745 -5.657 -7.752 -9.779 -11.953 -14.091 -16.312 -18.499 -20.641 -22.933 -25.089 -27.460 -29.474 -31.516 -33.708 -35.562 -37.942 -39.726 -42.289 -44.339 -46.238 -48.338 -50.652 -52.442 -54.490 -55.710 -57.821 -59.505 -60.952 -62.567 Note: VDD(=2.7V) is supplied through "BIAS CONNECT(PORT2)" of Network Analyzer. 4 3 5 2 S11 6 1 S22 Ref Ref. . Scattering Parameter Measurement Configuration -6- NJG1102F1 nRECOMMEND CIRCUIT (f=810~885MHz) 4 3 5 ZO=50 IN 15nH 6 12nH 2 27nH 1 12nH 1000pF 3pF Zo=50 OUT VDD nRECOMMENDED PCB DESIGN (Top View) IN L2 L1 2 L3 L4 C1 OUT C2 V DD PCB : FR4, t=0.2mm MICROSTRIP LINE WIDTH=0.4mm(Zo=50) PCB SIZE : 14.0x14.0mm PARTS LIST (f=810~885MHz) PART ID PARAMETER L1 L2 L3 L4 C1 C2 12nH 15nH 27nH 12nH 3pF 1000pF COMMENT TAIYO-YUDEN HK1608 Series TAIYO-YUDEN HK1608 Series TAIYO-YUDEN HK1608 Series TAIYO-YUDEN HK1608 Series MURATA GRM39 Series MURATA GRM39 Series -7- NJG1102F1 nPACKAGE OUTLINE (MTP6-1) Lead material Lead surface finish Molding material UNIT Weight : Copper : Solder plating : Epoxy resin : mm :15mg Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. -8- |
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